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Preliminary
SPF-2000
Product Description
Sirenza Microdevices' SPF-2000 is a high linearity, low noise 0.25m pHEMT. This 300m device is ideally biased at 3V,20mA for lowest noise performance. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications.
Low Noise High Linearity pHEMT GaAs FET
0.1 - 12 GHz Operation
Typical Gain Performance
30 25 20
Gmax 3V, 20mA 5V, 40mA
Gain, Gmax (dB)
Product Features * 15 dB Gmax at 12GHz * 1.25 dB FMIN at 12 GHz * +32 dBm Output IP3 at 12GHz * +20 dBm Output Power at 1dB Compression Applications * High IP3 LNA for VSAT, LMDS, Cellular Systems
and Instrumentation * Broadband Amplifiers
15 10
Gain
5 0 0 5 10 15 Frequency (GHz) 20 25 30
Sym bol
D e v ic e C h a r a c t e r is tic s :
V d s = 3 V , Id s = 2 0 m A , T = (u n le s s o th e r w is e n o te d )
T e s t C o n d it io n s ,
2 5 C
Tes t F re q u e n c y
1 .9 G H z 4 .0 G H z 1 2 .0 G H z 1 .9 G H z 2 .0 G H z 4 .0 G H z 1 2 .0 G H z 2 .0 G H z 2 .0 G H z 1 2 .0 G H z 1 2 .0 G H z 2 .0 G H z 2 .0 G H z 1 2 .0 G H z 1 2 .0 G H z 2 .0 G H z 2 .0 G H z 1 2 .0 G H z 1 2 .0 G H z
U n it s
M in .
Ty p .
M ax.
Gm ax
M a x i m u m A v a i la b le G a i n
[2 ]
ZS = Z S *, Z L = ZL*
dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm dBm mA
21 13 16 30 -1 .5 -
25 23 15 18 0 .5 0 .6 1 .2 2 0 .0 1 5 .0 21 18 1 7 .7 1 7 .0 1 3 .0 1 1 .0 32 28 32 30 85 -1 .0 11 2 -1 7 -1 7 11 0
25 17 20 140 -0 .5 -8 -8
S 21 N F M IN P 1dB
In s e rti o n G a i n
[2 ]
ZS = Z L = 5 0 O hm s Z S = G a m m a -o p t, Z L = Z L *
M inim um N o is e F ig ure
O u tp u t 1 d B C o m p re s s i o n P o i n t
V DS V DS V DS V DS V DS V DS V DS V DS V DS V DS V DS V DS
= = = = = = = = = = = =
5V, 3V, 5V, 3V, 5V, 3V, 5V, 3V, 5V, 3V, 5V, 3V,
ID S = ID S = ID S = ID S = ID S = ID S = ID S = ID S = ID S ID S ID S ID S = = = =
40 20 40 20 40 20 40 20 40 20 40 20
m m m m m m m m
A A A A A A A A
G 1dB
G a i n a t 1 d B C o m p re s s i o n P o i n t
O IP 3
O u tp u t T h i rd O rd e r In te rc e p t P o i n t
mA mA mA mA
ID S S VP GM B V GS B V GD R
TH
S a tu ra te d D ra i n C u rre n t P i n c h o ff V o lta g e
[1 ]
[2 ]
V D S = 2 V , ID S = 0 .1 5 0 m A V G S = -0 .2 5 V
[1 ]
V mS V V C /W
Tra n s c o n d u c ta n c e G a te to S o u rc e B re a k d o w n V o lta g e G a te to D ra i n B re a k d o w n V o lta g e T h e r m a l R e s i s ta n c e O p e ra ti n g V o lta g e O p e ra ti n g C u rre n t P o w e r D i s s i p a ti o n
[3 ] [1 ]
IG S = 0 .3 m A , d ra i n o p e n IG D = 0 .3 m A , V G S = -3 .0 V
V DS ID Q P D IS S
D ra i n - s o u rc e D ra i n - s o u rc e , q u i e s c e n t
V mA W
5 .5 55 0 .2
[3 ]
[3 ]
[1] 100% tested - DC parameters tested on wafer. [2] Sample tested - Samples pullled from each wafer lot. Sample test specifications are based on statistical data from sample test measurements. [3] VDS * IDQ < PDISS is recommended for continuous reliable operation.
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103295 Rev A
Preliminary SPF-2000 Low Noise High Linearity FET Absolute Maximum Ratings
Operation of this device beyond any one of these parameters may cause permanent damage. MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the operating conditions should also satisfy the following experssions: PDC - POUT < (TJ - TL) / RTH where: PDC = IDS * VDS (W) POUT = RF Output Power (W) TJ = Junction Temperature (C) TL = Lead Temperature (pin 4) (C) RTH = Thermal Resistance (C/W)
Parameter D rai n C urrent Forward Gate C urrent Reverse Gate C urrent D rai n-to-Source Voltage Gate-to-D rai n Voltage Gate-to-Source Voltage RF Input Power Operati ng Temperature Storage Temperature Range Power D i ssi pati on C hannel Temperature Symbol IDS IGSF IGSR VDS VGD VGS PIN TOP Tstor PDISS TJ Value IDSS 0.3 0.3 +7 -8 <-5 or >0 100 -40 to +85 -40 to +150 600 +150 U nit mA mA mA V V V mW C C mW C
Assembly Instructions: The recommended die attach is conductive epoxy or AuSn (80/20) solder with limited exposure to temperatures at or above 300C. The preferred wirebond method is thermo-compression wedge bond using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be used. Design Data: Complete design data including S-parameters, noise parameters, and large signal model are available upon request by contacting applications support at baredie-apps@sirenza.com
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-103295 Rev A
2
Preliminary SPF-2000 Low Noise High Linearity FET
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number Ordering Information
Part Number SPF-2000 Reel Size Gel Pak Devices/Pack 100
Mechanical Drawing
303 South Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-103295 Rev A
3

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